Quantum Wells in Magnesium–Manganese Bimetallic Antiperovskites for High Luminescence

Perovskite has attracted extensive attention in the realm
of photovoltaic
and light-emitting diodes (LEDs) on account of its outstanding photoelectric
properties. Perovskite-type quantum wells (QW) have been developed
for high-efficiency perovskite-type LEDs. However, there are few reports
on the in situ quantum well structure formed by a bimetallic antiperovskite
and its properties. In this work, we report a double/bimetallic antiperovskite
composed of magnesium and manganese. It is an in situ homogeneous
junction composed of a p-type manganese well layer and an n-type magnesium
barrier layer, which promotes the recombination of carriers and increases
the luminous efficiency. The in situ quantum wells enable the green
antiperovskite LED to have a maximum external quantum efficiency reaching
20.2% and a maximum luminance as high as 19000 cd m–2. These research results provide the chance to produce high-performance
LEDs based on an in situ quantum well structure. Meanwhile, the strategy
developed in this work is helpful for the design of other highly luminescent
lead-free materials.