Impact of Chamber-Wall Conditions on Anisotropic ALE of SiO₂
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资源简介：
Summarizes studies examining how chamber-wall contamination and cleaning affect etch uniformity and rate stability.
Includes precursor chemistries, removal methods, mitigation strategies (O₂ plasma cleaning, wall heating), corresponding etch rates, and references.
Emphasizes the importance of chamber maintenance for process repeatability.
提供机构：
Open Research Knowledge Graph
创建时间：
2025-11-09
