Transport in Corbino 2D Systems.

Table 1. DC current and magnetotransport of the small Corbino device. The table contains dc current (Idc) data measured in a small Corbino device under a constant bias voltage of Vdc=25 mV. The first column gives the perpendicular magnetic field (B) in Tesla. The remaining columns provide the measured current (Idc) in Amperes. Each current column corresponds to a different temperature (T), with the temperature value given in the column header in Kelvin. The sample resistance can be calculated using R=Vdc/Idc.

Table 2. DC current and magnetotransport of the medium Corbino device. The table contains dc current (Idc) data measured in a medium Corbino device under a constant bias voltage of Vdc=15 mV. The first column gives the perpendicular magnetic field (B) in Tesla. The remaining columns provide the measured current (Idc) in Amperes. Each current column corresponds to a different temperature (T), with the temperature value given in the column header in Kelvin. The corresponding sample resistance can be extracted using R=Vdc/Idc.

Table 3. DC current and magnetotransport of the large Corbino device. The table contains dc current (Idc) data measured in a large Corbino device under a constant bias voltage of Vdc=15 mV. The first column gives the perpendicular magnetic field (B) in Tesla. The remaining columns provide the measured current (Idc) in Amperes. Each current column corresponds to a different temperature (T), with the temperature value given in the column header in Kelvin. The corresponding sample resistance can be extracted using R=Vdc/Idc.

Table 4. DC current and magnetotransport of the Corbino device with Rb=11 μm. The table contains dc current (Idc) data measured in a Corbino device with an outer radius Rb=11 μm under a constant bias voltage of Vdc=20 mV. The first column gives the perpendicular magnetic field (B) in Tesla. The remaining columns provide the measured current (Idc) in Amperes. Each current column corresponds to a different temperature (T), with the temperature value given in the column header in Kelvin. The corresponding sample resistance can be extracted using R=Vdc/Idc.

Table 5. DC current and magnetotransport of the Corbino device with Rb=12 μm. The table contains dc current (Idc) data measured in a Corbino device with an outer radius Rb=12 μm under a constant bias voltage of Vdc=20 mV. The first column gives the perpendicular magnetic field (B) in Tesla. The remaining columns provide the measured current (Idc) in Amperes. Each current column corresponds to a different temperature (T), with the temperature value given in the column header in Kelvin. The corresponding sample resistance can be extracted using R=Vdc/Idc.

Table 6. DC current and magnetotransport of the Corbino device with Rb=18 μm. The table contains dc current (Idc) data measured in a Corbino device with an outer radius Rb=18 μm under a constant bias voltage of Vdc=15 mV. The first column gives the perpendicular magnetic field (B) in Tesla. The remaining columns provide the measured current (Idc) in Amperes. Each current column corresponds to a different temperature (T), with the temperature value given in the column header in Kelvin. The corresponding sample resistance can be extracted using R=Vdc/Idc.