Supplementary materials for the article “Study on the field-effect WSe2/Si heterojunction diode”

Supplementary materials for the article “Study on the field-effect WSe2/Si heterojunction diode” published in the journal Chinese Physics B. The materials include experimental details and detailed calculation method for the ideality factor. They also include figures of Fig. S1 (schematic device fabrication process), Fig. S2 (AFM images), Fig. S3 (scatting points of R and D* dependent on the light power density P), Fig. S4 (curves of Iph and RT dependent on the bias voltage Vds with Vg = 5 V, scatting points of Iph dependent on the light power density with Vg = 5 V, and scatting points of R and D* dependent on the light power density with Vg = 5 V), Fig. S5 (curves of Iph and RT dependent on the bias voltage Vds with Vg = -5 V, scatting points of Iph dependent on the light power density with Vg = -5 V and scatting points of R and D* dependent on the light power density with Vg = -5 V) and Fig. S6 (transfer characteristic curve of the Si sheet FET at Vds = 0.1 V).