RSD2013_v3/SiMTra_v2.2 - Simulation files of the examples in 'Modeling reactive magnetron sputtering: Opportunities and challenges'

A set of input files for the simulation software RSD2013 v3 and SiMTra v2.2 which generate the data used for the figures in the paper 'Modeling reactive magnetron sputtering: opportunities and challenges', published in Thin Solid Films (Elsevier) DOI:10.1016/j.tsf.2019.05.045. Also the set of experimental data for the current-voltage-pressure curves are included. Four examples are illustrated by simulation: 1) Redeposition of sputtered atoms - (SiMTra) Figure 1: Influence of working (Ar) pressure and the sputtered element (Li, Al, Ti, Y, Ta) on the fraction of sputtered material redeposited on the target. - (RSD/SiMTra) Figure 2a: Hysteresis behaviour of reactive pressure afo reactive flow, varying the redeposition fraction of the sputtered material Al. - (RSD/SiMTra) Figure 2b: Comparison of the critical points behaviour afo the redeposition fraction with a reduction of the sputter yield. 2) IV-characteristics - (RSD/SiMTra) Figure 3a: IV-characteristic of a simplified Ti/O2 system (only one oxidation state). - (RSD/SiMTra) Figure 3a: IV-characteristic of an Al/O2 system. - (Experimental) Figure 4: Experimental IVP-characteristics fo an Al/O2 system. 3) Sample rotation - (RSD/SiMTra) Figure 6a: Behaviour of the critical points afo the rotation speed of a substrate plate. - (RSD/SiMTra) Figure 6b: Time evolution of the reactive gas pressure for two rotation speeds of the substrate plate. 4) Pulsing discharge current - (RSD/SiMTra) Figure 7a: Behaviour of the critical points afo the pulsing frequency of the current. - (RSD/SiMTra) Figure 7b: Time evolution of the target state by pulsing the current.