RSD2013_v3/SiMTra_v2.2 - Simulation files of the examples in 'Modeling reactive magnetron sputtering: Opportunities and challenges'

A set of input files for the simulation software RSD2013 v3 and SiMTra v2.2 which generate the data used for the figures in the paper 'Modeling reactive magnetron sputtering: opportunities and challenges', published in Thin Solid Films (Elsevier) DOI:10.1016/j.tsf.2019.05.045. Also the set of experimental data for the current-voltage-pressure curves are included. Four examples are illustrated by simulation: 1) Redeposition of sputtered atoms - (SiMTra) Figure 1: Influence of working (Ar) pressure and the sputtered element (Li, Al, Ti, Y, Ta) on the fraction of sputtered material redeposited on the target. - (RSD/SiMTra) Figure 2a: Hysteresis behaviour of reactive pressure afo reactive flow, varying the redeposition fraction of the sputtered material Al. - (RSD/SiMTra) Figure 2b: Comparison of the critical points behaviour afo the redeposition fraction with a reduction of the sputter yield. 2) IV-characteristics - (RSD/SiMTra) Figure 3a: IV-characteristic of a simplified Ti/O2 system (only one oxidation state). - (RSD/SiMTra) Figure 3a: IV-characteristic of an Al/O2 system. - (Experimental) Figure 4: Experimental IVP-characteristics fo an Al/O2 system. 3) Sample rotation - (RSD/SiMTra) Figure 6a: Behaviour of the critical points afo the rotation speed of a substrate plate. - (RSD/SiMTra) Figure 6b: Time evolution of the reactive gas pressure for two rotation speeds of the substrate plate. 4) Pulsing discharge current - (RSD/SiMTra) Figure 7a: Behaviour of the critical points afo the pulsing frequency of the current. - (RSD/SiMTra) Figure 7b: Time evolution of the target state by pulsing the current.本数据集包含适用于仿真软件RSD2013 v3与SiMTra v2.2的输入文件集，可生成发表于爱思唯尔（Elsevier）旗下期刊《Thin Solid Films》、DOI为10.1016/j.tsf.2019.05.045的论文《Modeling reactive magnetron sputtering: opportunities and challenges》（反应磁控溅射建模：机遇与挑战）中各配图所需的数据。同时还包含电流-电压-压力曲线的实验数据集。 本数据集通过仿真展示了四类研究案例： 1. 溅射原子再沉积——（SiMTra）图1：工作氩气（Ar）压力与溅射元素（锂Li、铝Al、钛Ti、钇Y、钽Ta）对溅射材料在靶材表面再沉积占比的影响；（RSD/SiMTra）图2a：反应流条件下反应压力的迟滞行为，以及溅射材料铝Al的再沉积占比变化；（RSD/SiMTra）图2b：溅射产额降低时，再沉积占比的临界点行为对比。 2. 电流-电压（IV）特性——（RSD/SiMTra）图3a：仅含单一氧化态的简化Ti/O₂体系的IV特性曲线；（RSD/SiMTra）图3a：Al/O₂体系的IV特性曲线；（实验）图4：Al/O₂体系的实验电流-电压-压力（IVP）特性曲线。 3. 衬底台旋转——（RSD/SiMTra）图6a：衬底台转速相关的临界点行为；（RSD/SiMTra）图6b：两种衬底台转速下反应气体压力的时间演化过程。 4. 脉冲放电电流——（RSD/SiMTra）图7a：电流脉冲频率相关的临界点行为；（RSD/SiMTra）图7b：通过电流脉冲调控的靶材状态随时间的演化过程。