Crystallographic structure solution and refinement (1 Å = 0.1 nm).
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aFigure of merit = cos(phase error).b41.5% solvent content.cValues in parentheses are for the highest resolution bin (where applicable).dRsymm = ΣhΣi|Ihi-h>|/ΣhΣi|Ihi|, where Ihi is the intensity of the ith measurement of the same reflection and h> is the mean observed intensity for that reflection.Crystallographic structure solution and refinement (1 Å = 0.1 nm).
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2015-12-02
