A new version of a computer program for dynamical calculations of RHEED intensity oscillations

Abstract We present a new version of the RHEED program which contains a graphical user interface enabling the use of the program in the graphical environment. The presented program also contains a graphical component which enables displaying program data at run-time through an easy-to-use graphical interface. Title of program: RHEEDGr Catalogue Id: ADUY_v2_0 [ADWV] Nature of problem Reflection high-energy electron diffraction (RHEED) is a very useful technique for studying growth and surface analysis of thin epitaxial structures prepared by the molecular beam epitaxy (MBE). The RHEED technique can reveal, almost instantaneously, changes either in the coverage of the sample surface by adsorbates or in the surface structure of a thin film. Versions of this program held in the CPC repository in Mendeley Data ADUY_v1_0; RHEED; 10.1016/j.cpc.2004.12.001 ADUY_v1_1; RHEED_v2; 10.1016/j.cpc.2006.08.003 ADUY_v2_0; RHEEDGr; 10.1016/j.cpc.2005.09.004 ADUY_v3_0; RHEEDGR-09; 10.1016/j.cpc.2009.07.003 ADUY_v4_0; RHEED1DProcess; 10.1016/j.cpc.2009.11.009 This program has been imported from the CPC Program Library held at Queen's University Belfast (1969-2018)**摘要** 本文提出了RHEED程序的新版本，该程序集成了图形用户界面（Graphical User Interface，GUI），支持在图形化环境中运行。此外，新版本还新增了图形化组件，可通过简洁易用的图形界面在程序运行时实时展示相关数据。 程序名称：RHEEDGr 目录编号：ADUY_v2_0 [ADWV] **问题本质** 反射式高能电子衍射（Reflection High-Energy Electron Diffraction，RHEED）是一项极具实用价值的表征技术，可用于研究通过分子束外延（Molecular Beam Epitaxy，MBE）制备的超薄外延结构的生长过程与表面特性分析。该技术可近乎实时地揭示样品表面吸附物覆盖度的变化，或是薄膜表面结构的演变。 **Mendeley数据集中CPC仓库收录的该程序版本** ADUY_v1_0；RHEED；10.1016/j.cpc.2004.12.001 ADUY_v1_1；RHEED_v2；10.1016/j.cpc.2006.08.003 ADUY_v2_0；RHEEDGr；10.1016/j.cpc.2005.09.004 ADUY_v3_0；RHEEDGR-09；10.1016/j.cpc.2009.07.003 ADUY_v4_0；RHEED1DProcess；10.1016/j.cpc.2009.11.009 本程序源自贝尔法斯特女王大学托管的CPC程序库（1969-2018年）。