JYFL-ACCLAB-RADEF_2025-11 Temperature dependence of SEB and SELC sensitivity of SiC power MOSFETs
收藏DataCite Commons2026-03-04 更新2026-05-04 收录
下载链接：
https://etsin.fairdata.fi/dataset/aac13eef-3d56-43bc-b578-161caffd1063
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资源简介：
This dataset contains data of heavy ion irradiation tests at RADEF with 16.3 MeV/n ion cocktail. Devices are 3rd gen. SiC MOSFETs (CPM3-1200-0075A, CPM3-0900-0065A and CPM3-1200-0160A) and they were irradiated at different temperatures. Temperature dependence of single event burnout sensitivity and leakage current degradation was observed.
提供机构：
University of Jyväskylä
创建时间：
2026-03-04
