JYFL-ACCLAB-RADEF_2025-11 Temperature dependence of SEB and SELC sensitivity of SiC power MOSFETs

This dataset contains data of heavy ion irradiation tests at RADEF with 16.3 MeV/n ion cocktail. Devices are 3rd gen. SiC MOSFETs (CPM3-1200-0075A, CPM3-0900-0065A and CPM3-1200-0160A) and they were irradiated at different temperatures. Temperature dependence of single event burnout sensitivity and leakage current degradation was observed.