Insights Into Voltage-Driven Boron Migration for Electrical Manipulation of Magnetism: An XAS/XMCD Study

The exploration and development of alternative migrating ionic species is highly desirable in the fast-growing field of magneto-ionics. Boron, the most essential dopant in p-type semiconductors in modern CMOS electronics, has imporatnt applications in magnetic and spintronic devices. In this work, we find the first evidence of voltage-induced modulation of magnetization in sputtered FeB films, and we propose to pinpoint the voltage-driven B-motion mechanism in this system using XAS/XMCD techniques.