Quasi-non-volatile capacitorless DRAM based on ultra-low leakage edge contact MoS2 transistor

This dataset supports the research on edge-contact (EC) two-dimensional semiconductors (2DSCs) for post-Moore era applications, as reported in the associated research article. The data correspond to the performance characterization of molybdenum disulfide (MoS2)-based field-effect transistors (FETs) and capacitorless two-transistor (2T0C) DRAM devices, fabricated via an in-situ multi-step process.