Dataset for GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

<strong>Dataset for GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell to be published </strong>(link pending). All measurements, unless stated otherwise, were taken at Instituto de energía solar, Universidad Politécnica de Madrid (IES-UPM). Detailed description of the data can be found in the headers of individual files. <strong>Fig2a_illuminated_IV.xlsx</strong>: Current-voltage characteristics of the prototype when illuminated with simulated AM1.5G. <strong>Fig2d_e_S4_S5_EQE.xlsx:</strong> External quantum efficiencies of prototype and test device, measured before and after deposition of anti-reflection coating. <strong>Fig3_IIVV.txt:</strong> Current-voltage characteristic of prototype when both junctions are measured simultaneously (AM1.5G). <strong>Fig4e_IV.xlsx:</strong> Current-Voltage characteristics of devices with or without compensated base contact under illumination, measured in a probe station and after wirebonding. <strong>Fig5a_illuminated_IV.xlsx:</strong> Current-voltage characteristics of the test device when illuminated at AM1.5G. <strong>FigS1b_SIMS.xlsx:</strong> Doping profiles measured with secondary ion mass spectroscopy by Loughborough Surface Analysis Limited (LSA Ltd). <strong>FigS6_EQE_using_solar_simulator_LEDs.xlsx:</strong> External quantum efficiencies of the prototype, measured using single channels of the LED- solar simulator. Both junctions of the prototype were measured with the other junction in open and short circuit. <strong>FigS7_dark_IV.xlsx:</strong> Current-voltage characteristics of the prototype in the dark. <strong>FigS8_SIMS.xlsx:</strong> Doping profiles of a sample containing the compensated contact measured with secondary ion mass spectroscopy by Loughborough Surface Analysis Limited (LSA Ltd). <strong>FigS9_IIVV.txt:</strong> Current-voltage characteristic of the test device when both junctions are measured simultaneously (AM1.5G). <strong>Junction areas of prototype [mm²]:</strong> Illuminated: Top junction: 1.02 \(\pm\)0.06 Bottom junction: 1.57 \(\pm\)0.11 Dark: Top junction: 1.16 \(\pm\)0.05 Bottom junction: 1.93 \(\pm\)0.10 <strong>Junction areas of test device [mm²]:</strong> Illuminated: Top junction: 2.84 \(\pm\)0.12 Bottom junction: 3.32 \(\pm\)0.12 Dark: Top junction: 3.28 \(\pm\)0.10 Bottom junction: 4.01 \(\pm\)0.09