Quantum correlation of channel-confined ions in graphene-based transistors fo...

B2FIND2026-03-19 收录

纳米电子器件

离子传输机制

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https://b2find.eudat.eu/dataset/974f5c50-55af-5e56-9415-373291300530 数据链接链接失效反馈

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<p>Based on <em>ab initio</em> molecular dynamics simulations, we explain how graphene-based ion transistors work, using channels filled with K⁺ ions. Our...

Searching for the thinnest metallic wire

准一维材料

纳米电子器件

One-dimensional materials have gained much attention in the last decades: from carbon nanotubes to ultrathin nanowires, to few-atom atomic chains, these can all display unique electronic properties an

DataCite Commons2026-03-12 更新320

Fabrication of highly n-type-doped germanium nanowires and Ohmic contacts using ion implantation and flash lamp annealing

半导体纳米线

纳米电子器件

Accurate control of doping and fabrication of metal contacts on n-type germanium nanowires (GeNWs) with low resistance and linear characteristics remain a major challenge in germanium-based nanoelectr

DataCite Commons2024-08-12 更新80

S9 File -

半导体设计

纳米电子器件

A nanoscale nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on source /drain (S/D) self programmable floating gates is proposed. Comparing to the conventional reconfigu

NIAID Data Ecosystem20

相变存储器的速度极限

相变存储器

纳米电子器件

系统地展示了不同电极尺寸的 Sb 器件在设定脉冲条件下的电压分布情况，结果如图 3.11 所示。电极尺寸越小，同样脉冲条件下完成 Set 操作所需脉冲电压就越小，如在 10000 ps 条件下，200 nm 器件单元需要 2.9 V，随着器件尺寸减小，电压需要降低至 2.6 V（120 nm）和 2.1 V（60 nm）。这主要是因为 Set 操作主要是相变材料的结晶过程，电极尺寸越小，柱状电极上

国家基础学科公共科学数据中心120

Simulation dataset: Si vs. MoTe₂ DM-JL-GAA Nanowire FET Biosensor — FETToy 2.0 Output Characteristics

纳米电子器件

生物传感器性能评估

FETToy 2.0 (NanoHub) ballistic transport simulation output data for Si and MoTe₂ junctionless gate-all-around (JL-GAA) nanowire FET biosensors. Includes ID–VD output characteristic CSV files for gate

Zenodo2026-05-17 更新40

Quantum correlation of channel-confined ions in graphene-based transistors fo...

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