Gating parameters of WT and mutant Kv7.1 channels.
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V50 (half activation voltage) and z (equivalent gating charge) were derived from fitting single Boltzmann function; I60 corresponds to the current density measured at +60 mV in pA/pF. ΔG0 and ΔΔG0c were calculated as described in methods. Data are expressed as mean ± SEM and in parentheses are indicated the number of cells.*, p+ leak channel.
创建时间：
2015-12-02
