Impact of Temperature on Single-Event Effects in GaN HEMTs
收藏科学数据银行2025-03-26 更新2026-04-23 收录
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https://www.scidb.cn/detail?dataSetId=b08e45c14f394742aec2184c18b8e50c
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资源简介：
Experimental investigations on AlGaN/GaN HEMT devices were conducted at 238 K, 298 K, 323 K, and 413 K using the femtosecond pulsed laser single-event effects test facility at the National Space Science Center (NSSC), Chinese Academy of Sciences (CAS).
提供机构：
Hailong Yu; Runjie Yuan; Ziyu Wang; Jianwei Han; Shipeng Shangguan; 中国科学院国家空间科学中心
创建时间：
2025-03-25
