高速光电探测器芯片本征参数和寄生参数仿真数据

面向高速光电探测器芯片设计与高频性能优化需求，基于等效电路模型，研究光电探测器本征参数和寄生参数，背景是芯片本征与寄生参数直接影响探测器高频响应。产生方法通过 Silvaco、ADS等器件仿真软件对芯片结构进行电学、光学仿真。主要记录芯片本征光电转换参数（量子效率、频率响应）、寄生电阻电容（封装寄生、电极寄生）等数据。数据内容包含“高速光电探测器芯片等效电路模型.png”和“高速光电探测器芯片本征参数和寄生参数仿真数据.txt”和“ADS_PD.7zads”仿真源文件，为光电探测器芯片本征参数和寄生数据,为综合设计芯片结构提供了依据。意义在于指导芯片结构优化，减少寄生效应，提升高速性能。

The intrinsic and parasitic parameters of photodetector chips directly determine their high-frequency response, creating an urgent demand for research on these parameters based on equivalent circuit models to support the design and high-frequency performance optimization of high-speed photodetector chips. This dataset is generated through electrical and optical simulations of chip structures using device simulation software such as Silvaco and ADS. It mainly records the intrinsic photoelectric conversion parameters of the chip (including quantum efficiency and frequency response) as well as parasitic resistance and capacitance (including packaging parasitics and electrode parasitics). The dataset contains three files: "Equivalent Circuit Model of High-speed Photodetector Chip.png", "Simulation Data of Intrinsic and Parasitic Parameters of High-speed Photodetector Chip.txt", and "ADS_PD.7zads". These data focus on the intrinsic and parasitic parameter data of photodetector chips, providing a basis for comprehensive chip structure design. The dataset can guide the optimization of chip structures, reduce parasitic effects, and improve the high-frequency performance of photodetector chips.

搜集汇总

背景与挑战

背景概述

该数据集包含高速光电探测器芯片的本征参数和寄生参数的仿真数据，旨在优化芯片设计和高频性能。数据通过Silvaco、ADS等软件仿真生成，包括量子效率、频率响应等本征参数和封装寄生、电极寄生等寄生参数，为芯片结构优化提供依据。