Spectral and Guiding Dynamics in GaN Photonic Crystal Scintillators: Optical Insights Across UV, X-ray, Alpha Radiation

This study conducts a thorough comparative analysis of gallium nitride (GaN) thin films, both with and without integrated photonic crystal (PhC) structures. The primary focus is on their scintillation and photoluminescence properties. GaN is recognized for its potential in diverse optoelectronic and radiation detection applications, and the incorporation of PhC structures further amplifies its optical and radiation response. Our examination encompasses emission spectra induced by 5.9 keV X-ray source, decay curves, and pulse height spectra in response to 241 Am 5.5 MeV alpha-rays irradiation. Results indicate that the quantum efficiency of PhC GaN competes favorably with plain GaN, positioning it as a promising material for radiation detection applications. This comprehensive investigation underscores the potential of PhC GaN in advancing next-generation radiation detectors and optoelectronic devices. The findings contribute valuable insights to the scientific community, paving the way for enhanced materials and technologies in the realm of radiation detection and optoelectronics.