XRD and Crystallographic Data of Electrochemically Textured Silicon (Si) for Porous Surface Formation

This dataset provides X-ray diffraction (XRD) data and crystallographic reference parameters for an electrochemically textured silicon (Si) sample. The surface was modified through anodic etching to obtain a porous morphology that enhances light trapping and promotes better lattice matching for subsequent heterostructure formation. The dataset supports investigations into porous silicon as a functional substrate for semiconductor and oxide heterostructures used in photovoltaic and photonic devices. The dataset includes: Experimental XRD intensity data (2θ vs. counts) from the etched silicon sample; Reference stick pattern for cubic silicon (reference code 01-077-2108, ICSD No. 060386) Structural parameters: a = b = c = 5.4198 Å, α = β = γ = 90°, space group Fd-3m (No. 227), density = 2.34 g cm⁻³, Z = 8 These data are intended to facilitate structural analysis, comparison of porosity-induced strain effects, and the design of Si-based heterostructures in energy conversion and optoelectronic applications. Funding:Prepared within the project “Design and research of oxide heterostructures for portable solar cells” (Project No. 0124U000223), funded by the National Research Foundation of Ukraine under the Cambridge–NRFU 2022 Individual Grants programme (supported by the University of Cambridge, UK).