6D strain microscopy of Ge/SiGe parabolic quantum wells on complex virtual substrates
收藏ESRF Portal2028-01-01 更新2026-04-23 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-2119588632
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资源简介：
We will use six-dimensional (6D) dark-field X-ray microscopy (DFXM) at the new beamline ID03 to obtain a detailed view of the strain landscape in parabolic Ge/Si1-xGex quantum wells (pQWs) deposited on GeSi virtual substrates for applications in micro- and optoelectronics. In particular, volumetric mapping of the full strain tensor in these alloyed multilayers with fine spatial resolution will be demonstrated. This data will allow refinement of our Finite Element Method (FEM) models to predict device performance and provide a fundamental understanding of plastic relaxation mechanisms in complex epitaxial heterostructures.
提供机构：
Roma Tre University, Science, via vasca navale 84, 00146, Roma, ITALY; Universita di Roma Tre, Dipartimento di Scienze, Via della Vasca Navale 79, 00146, Roma, ITALY; Universita di Roma Tre, Dipartimento di Scienze, Via della Vasca Navale 79, 00146 Roma, Italy; ESRF, 71 avenue des Martyrs CS 40220, 38043, Grenoble, FR; ESRF, 71 avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France; Universita degli Studi di Milano Bicocca, Dipartimento di Scienza dei Materiali, Via Cozzi 53, 20125 , Milano, ITALY
创建时间：
2028-01-01
