An Extremely Low Noise-Equivalent Power Photoreceiver Using High-Gain InGaAs/AlGaAsSb APDs: Dataset and Figures

Datasets of the figures found in the manuscript "An Extremely Low Noise-Equivalent Power Photoreceiver Using High-Gain InGaAs/AlGaAsSb APDs"Files in this repository correspond to the results in "An Extremely Low Noise-Equivalent Power Photoreceiver Using High-Gain InGaAs/AlGaAsSb APDs" submitted to IEEE Journal of Lightwave Technology.The figure files contain the graphical figures (.png) found within the manuscript and the data (.csv) required to replicate the figures.Manuscript Abstract:This work presents a high-sensitivity shortwave infrared (SWIR) photoreceiver, designed using a high-gain In0.53Ga0.47As/Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiode (APD) with an extremely low excess noise factor of 100 fW/√Hz to 10's of pW/√Hz. Compared to its best-in-class 80-µm counterpart, this work's receiver demonstrated a 6.5× sensitivity improvement at 2× the operating bandwidth, with an NEP of 32.5 fW/√Hz. These results are of great significance for SWIR applications including extending the range of LiDAR systems, for which optimal performance requires the maximal-sensitivity detection of few-nanosecond optical pulses

本数据集收录了发表于《IEEE 光波技术杂志》的论文《基于高增益 In0.53Ga0.47As/Al0.85Ga0.15As0.56Sb0.44 雪崩光电二极管 (APD) 的极低噪声等效功率光电接收机》中出现的图像数据。该仓库中的文件对应于论文中的研究结果。图像文件包含了论文中的图形图像 (.png) 以及用于复现这些图像所需的数据 (.csv)。论文摘要如下：本研究提出了一种高灵敏度短波红外 (SWIR) 光电接收机，采用具有极低过剩噪声系数（100 fW/√Hz 至数十 pW/√Hz）的高增益 In0.53Ga0.47As/Al0.85Ga0.15As0.56Sb0.44 雪崩光电二极管 (APD) 设计而成。与同类产品中最佳性能的 80-µm 产品相比，本研究的接收机在两倍的工作带宽下实现了 6.5 倍的灵敏度提升，噪声等效功率 (NEP) 达到 32.5 fW/√Hz。这些成果对于 SWIR 应用领域具有重要意义，尤其是扩展激光雷达 (LiDAR) 系统的应用范围，而对于这些系统而言，实现最佳性能需要检测到极短纳秒级的光脉冲。