Measurements of single-event burn-out of HV power devices for different technology nodes

High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR). As a consequence, device development has to ensure adequate radiation hardness for every device technology. In order to reduce testing times accelerated irradiation tests at facilities with a nucleon energy spectrum close to the natural terrestrial CR are essential. Infineon has organized irradiation test campaigns on a regular basis. A detailed description of power device testing together with several references to our work can, e.g., be found in:Soelkner, G., Ensuring the reliability of power electronic devices with regards to terrestrial cosmic radiation, MicroelectrRel_58 (2016) pp. 39 to50.Also, a JEDEC standard, JEP151, which is based on suggestions by Infineon, has been published.