In-situ strain relaxation of InGaN/GaN mesa measured by μLaue

Name: In-situ strain relaxation of InGaN/GaN mesa measured by μLaue
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B2FIND2026-04-30 收录

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For the development of efficient μdisplays, CEA-Leti is developing a new “InGaN” substrate. This new substrate is made of a 200 nm InGaN layer which is patterned into 5 μm...