Suplement Number 1
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资源简介：
The supplementary material contains comparative study of organic memristor performance parameters, device fabrication process, film thickness distribution, Raman spectroscopy analysis, statistical distribution of ON/OFF ratio, switching speed and scan rate analysis, power consumption chart, bending test data and logic gate realization of memristors, and lastly temperature-dependent data of devices while latched in ON and OFF states.
创建时间：
2025-12-10
