Data: Edge and Defect Effects on Charge Distribution in Collapsed MoS2 Nanotubes

Molybdenum Disulfide (MoS2) has emerged as a promising material for next-generation electronics and optoelectronic devices. MoS2 nanotubes (NTs) and their collapsed ribbon-like forms (collapsed NTs) synthesized via chemical vapour transport (CVT) methods under chemical equilibrium typically exhibit low structural defect densities. However, defects and surface damage often emerge during device fabrication or operation, potentially degrading their performance. In this study, we investigated how structural irregularities, such as terminated layers, flakes or NTs grown on the surface, and highly strained areas influence charge injection and its redistribution in collapsed NTs. By combining scanning tunnelling microscopy (STM), Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (c-AFM), we analysed charge dynamics and confinement at the nanoscale. We find that the structural defects act as charge traps, scattering centres, and transport barriers, leading to reduced mobility, localized charge accumulation, and inhomogeneous charge distribution. These effects can significantly impact device behaviour, reliability, and lifespan. Our findings highlight the critical importance of nanoscale structural and electrical characterization in the development of defect-tolerant, high-performance technologies based on transition metal dichalcogenides (TMD).