Reductive Elimination of Hypersilyl Halides from Zinc(II) Complexes. Implications for Electropositive Metal Thin Film Growth
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https://figshare.com/articles/dataset/Reductive_Elimination_of_Hypersilyl_Halides_from_Zinc_II_Complexes_Implications_for_Electropositive_Metal_Thin_Film_Growth/2219200
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资源简介：
Treatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in
tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83–99% yield. X-ray crystal
structures revealed dimeric structures with Zn2X2 cores. Thermogravimetric analyses of [Zn(Si(SiMe3)3)X(THF)]2 demonstrated a loss of coordinated THF
between 50 and 155 °C and then single-step weight losses between
200 and 275 °C. The nonvolatile residue was zinc metal in all
cases. Bulk thermolyses of [Zn(Si(SiMe3)3)X(THF)]2 between 210 and 250 °C afforded zinc metal in 97–99%
yield, Si(SiMe3)3X in 91–94% yield, and
THF in 81–98% yield. Density functional theory calculations
confirmed that zinc formation becomes energetically favorable upon
THF loss. Similar reactions are likely to be general for M(SiR3)n/MXn pairs and may lead to new metal-film-growth processes for chemical
vapor deposition and atomic layer deposition.
创建时间：
2016-02-16
