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Electronegative Oligothiophenes Based on Difluorodioxocyclopentene-Annelated Thiophenes: Synthesis, Properties, and n-Type FET Performances

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NIAID Data Ecosystem2026-03-06 收录
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https://figshare.com/articles/dataset/Electronegative_Oligothiophenes_Based_on_Difluorodioxocyclopentene_Annelated_Thiophenes_Synthesis_Properties_and_n_Type_FET_Performances/2953456
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资源简介:
A series of oligothiophenes containing difluorodioxocyclopentene-annelated thiophene units was synthesized, and their electronic properties and structures were investigated by spectroscopic and electrochemical measurements and X-ray analyses. The oligothiophenes having the terminal difluorodioxocyclopentene annelations showed n-type semiconducting behavior on FET devices, and the quaterthiophene revealed field-effect electron mobility as high as 1.3 × 10-2 cm2 V-1 s-1.
创建时间:
2016-06-03
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