Electronegative Oligothiophenes Based on Difluorodioxocyclopentene-Annelated Thiophenes: Synthesis, Properties, and n-Type FET Performances
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资源简介：
A series of oligothiophenes containing difluorodioxocyclopentene-annelated thiophene units was synthesized, and their electronic properties and structures were investigated by spectroscopic and electrochemical measurements and X-ray analyses. The oligothiophenes having the terminal difluorodioxocyclopentene annelations showed n-type semiconducting behavior on FET devices, and the quaterthiophene revealed field-effect electron mobility as high as 1.3 × 10-2 cm2 V-1 s-1.
创建时间：
2016-06-03
