Morphological and Compositional Analysis of Electrodeposited Indium (III) Sulfide (In2S3) Films

In the last few years, notable progress in understanding the growth mechanism of thin solar films deposited by numerous techniques have been made. Electrodeposition continues to be a complex deposition technique that can lead to low-quality material regions (crack) in the semiconductor material. Such cracks form porous zones on the substrate and diminish the heterojunction interface quality of a photovoltaic (PV) cell. In this paper, electrodeposition of In2S3 films was systematically and quantitatively investigated by varying the electrodeposition parameters including bath composition, current density, deposition time, and deposition temperature. Their effects upon the film growth mechanism, composition, and morphology were studied with the help of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and fracture and buckling software (digital image analysis). In addition, the effect of different glass-substrates (Mo, ITO, and FTO) and annealing treatments upon the performance of the electrodeposited In2S3 film was analyzed. Furthermore, the Taguchi Method was used to determine the optimal electrodeposition parameters and study their influence upon the morphological and compositional properties of In2S3 films.近数年来，学界对多种工艺制备的超薄太阳能薄膜的生长机制已取得显著研究进展。电沉积仍是一种复杂的沉积工艺，可能会在半导体材料中引入低品质区域（裂纹）。此类裂纹会在衬底上形成多孔区域，进而降低光伏（Photovoltaic, PV）电池的异质结界面质量。本文通过调控镀液成分、电流密度、沉积时长及沉积温度等电沉积工艺参数，对硫化铟（In₂S₃）薄膜的电沉积过程开展了系统的定量研究。借助扫描电子显微镜（Scanning Electron Microscopy, SEM）、能量色散X射线能谱（Energy Dispersive X-ray Spectroscopy, EDS）以及基于数字图像分析的断裂与屈曲软件，本研究探究了上述参数对薄膜生长机制、成分及形貌的影响。此外，本文还分析了不同玻璃基衬底（钼Mo、氧化铟锡ITO、氟掺杂氧化锡FTO）及退火处理对电沉积制备的In₂S₃薄膜性能的影响。进一步地，本文采用田口方法（Taguchi Method）确定最优电沉积工艺参数，并探究其对In₂S₃薄膜形貌与成分特性的影响。