Data for paper: Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys
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The files correspond to experimental results in paper: “Avalanche breakdown characteristics of Al<sub>1-x</sub>Ga<sub>x</sub>AsSb quaternary alloys”. There are two types of files: -.PNG, which corresponds to the figures -.CSV, which are raw data in figures The work in this paper mainly focus on the experiments to accurately determine avalanche breakdown characteristics of Al<sub>1-x</sub>Ga<sub>x</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> for <i>x</i> = 0 to 0.15. The test structures were p-i-n diodes with 100 nm avalanche layers to maximize usefulness of the results for high bandwidth APDs. In addition, due to a lack of experimental reports, this work included experimental confirmation of minimum bandgaps, <i>E<sub>g</sub></i>, of Al<sub>1-x</sub>Ga<sub>x</sub>As<sub>0.56</sub>Sb<sub>0.44</sub>. The data consists of results from Al<sub>1-x</sub>Ga<sub>x</sub>As<sub>0.56</sub>Sb<sub>0.44</sub> avalanche photodiodes (<i>x</i> = 0 to 0.15): photoresponse, dark current, capacitance, bandgap, avalanche gain and breakdown voltage. More details about these data/figures can be found in README file. <br>
