Increase Ga vacancy-related defects by reducing Sn in Sn-doped β-Ga2O3
收藏科学数据银行2023-03-16 更新2026-04-23 收录
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资源简介：
Doping concentration, crystal quality, transmittance, fluorescence spectrum and Raman analysis of Sn-doped GaO after oxygen annealing
提供机构：
Shanghai Institute of Optics and Fine Mechanics
创建时间：
2023-03-15
