Increase Ga vacancy-related defects by reducing Sn in Sn-doped β-Ga2O3

Name: Increase Ga vacancy-related defects by reducing Sn in Sn-doped β-Ga2O3
Creator: Shanghai Institute of Optics and Fine Mechanics
Published: 2023-03-15T00:00:00+08:00

科学数据银行2023-03-16 更新2026-04-23 收录

氧化镓缺陷工程

半导体材料光谱表征

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资源简介：

Doping concentration, crystal quality, transmittance, fluorescence spectrum and Raman analysis of Sn-doped GaO after oxygen annealing

提供机构：

Shanghai Institute of Optics and Fine Mechanics

创建时间：

2023-03-15

Increase Ga vacancy-related defects by reducing Sn in Sn-doped β-Ga2O3

资源简介：

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