The use of valence-band X-ray emission spectroscopy and resonant inelastic X-ray scattering to investigate the sensitivity towards ligands

Methods that offer the capacity to probe both occupied and unoccupied states during the same measurement and can monitor the electronic structure of actinide (An) materials on an extended energy scale are very valuable. Recent advances in X-ray emission spectroscopy (XES) techniques reveal their potential to provide valuable information on the electronic structure with high energy resolution. Here, molecular systems of U(IV) doped with different ligands (Cl, O, S) will allow us to investigate the sensitivity of valence-band RIXS and XES towards ligands. The electronic structure of the U systems will be studied by valence-band RIXS at the L3 edge. The LB5 emission line will be recorded with the ROBL emission spectrometer, which enables the acquisition of spectra with a substantial gain in resolution. The results will be compared with theoretical calculations in order to get further insights into the description of the electronic structure of the U systems.