RHEED intensities from two-dimensional heteroepitaxial nanoscale systems of GaN on AlN(0 0 0 1) and AlN(0 0 0 ̅1) surfaces

This paper presents a version of simulation program, which facilitates the calculation of changes to the intensity of RHEED oscillations in the function of the glancing angle of incidence of the electron beam, employing various models of scattering crystal potential for heteroepitaxial structure of hexagonal GaN film nucleated on AlN(0 0 0 1) and AlN(0 0 0 ̅1) surfaces, including the possible existence of various diffuse scattering models through the layer parallel to the surface.