Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution

Name: Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution
Creator: doi.org
Published: 2025-03-25T20:22:32+08:00

doi.org2025-03-25 收录

半导体材料

液相外延

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http://doi.org/10.17632/rzj4dt999v.1 数据链接链接失效反馈

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A typical surface morphology of the high Ge content SiGe epilayer prepared on Si(111) substrate.

在Si(111)衬底上制备的高锗含量SiGe外延层所呈现的典型表面形貌。

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doi.org

Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution

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