Extended Defects in SiC: Selective Etching and Raman Study

Name: Extended Defects in SiC: Selective Etching and Raman Study
Creator: Institute of High Pressure Physics
Published: 2023-12-19T09:45:32+08:00

RepOD Repository for Open Data2023-12-19 更新2026-07-23 收录

碳化硅缺陷表征

拉曼光谱与选择性刻蚀

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/NBXGPF 数据链接链接失效反馈

官方服务：

资源简介：

Weyher, Jan, 2023, "Extended Defects in SiC: Selective Etching and Raman Study", https://doi.org/10.18150/NBXGPF, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2023-12-19

Extended Defects in SiC: Selective Etching and Raman Study

资源简介：

相关数据集