Nonfluorinated Volatile Copper(I) 1,3-Diketiminates as Precursors for Cu Metal Deposition via Atomic Layer Deposition

Novel nonfluorinated Cu(diketiminate)L complexes with L = neutral
olefinic ligand have been prepared as stable, volatile Cu(I)
precursors for the deposition of copper films by an atomic layer
deposition (ALD) process. Among them, the complexes of 4-a and
5-a are the most volatile and stable at low temperature (55 °C).
A clean, conformal copper film was deposited at 120 °C in an
ALD process. These Cu(I) complexes are the first examples of
nonfluorinated copper(I) diketiminates that can be readily applied
to an industrial microelectronic fabrication process.