Replication Data for: A statistical characterization of dielectric breakdown in FDSOI nanowire transistors

This dataset contains the results of Ramped Voltage Stresses (Ig-Vg curves) applied to induce the BD of the gate stack of FDSOI nanowire transistors, together with the corresponding post-BD Id-Vd, Id-Vg and Ig-Vg characteristics of the devices. From the data, the BD event and post-BD conduction of such devices were investigated. The dataset corresponds to the set of data obtained from the experimental measurements without any type of processing.