High Performance n- and p-Type Field-Effect Transistors Based on Tetrathiafulvalene Derivatives
收藏NIAID Data Ecosystem2026-03-06 收录
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资源简介：
The first n-type FET based on TTF derivatives was prepared. TTF derivatives with halogeno-substituted quinoxaline rings showed excellent n- or p-type performances with high carrier mobilities. Introduction of halogen groups determined the FET polarity by controlling the HOMO and LUMO levels of the molecules. The π-stacking structures were observed in the single crystals of tetrahalogeno-TTFs.
创建时间：
2016-10-12
