Data for: "Ni/Au contacts to corundum α-Ga2O3"
收藏DataCite Commons2023-02-13 更新2025-04-17 收录
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https://pureportal.strath.ac.uk/en/datasets/57613865-46f0-47e7-b25e-423519cf180f
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资源简介：
The structural, chemical and electrical properties of Ni/Au contacts to atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unlike what is observed for other metals like Ti), and instead, the metallurgical processes of the Ni-Au bilayer dominate the electrical properties. It is found that 400-450oC is the optimal annealing temperature, which allows for metal diffusion to heal gaps at the metal/semiconductor interface, but is not sufficient for Ni and Au to significantly interdiffuse and form an alloy with compositional inhomogeneities.
提供机构：
University of Strathclyde
创建时间：
2023-02-13
