Ultrafast high-endurance memory based on sliding ferroelectrics

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area-efficient and energy-efficient electronics, especially in emerging nonvolatile memory technology. In this study, we investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a novel form of atomically thin two-dimensional ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 1011 switching cycles, comparable to state-of-the-art FeFET devices. These superior characteristics highlight the potential of two-dimensional sliding ferroelectrics for inspiring next-generation nonvolatile memory techno..., The data was collected by MATLAB code. The resistance Rxx was normalized by the geometric factor., , # Ultrafast high-endurance memory based on sliding ferroelectrics [https://doi.org/10.5061/dryad.1jwstqk3c](https://doi.org/10.5061/dryad.1jwstqk3c) Numerical data was used for generating the plot in the paper. Fig. 1c:Â VB_up (V): The back gate voltage swept in the increasing direction. Rxx_up (kOhm):Â The resistance of the sample while back gate voltage is swept in the increasing direction. VB_down (V):Â The back gate voltage swept in the decreasing direction. Rxx_down (kOhm):Â The resistance of the sample while back gate voltage is swept in the decreasing direction. Fig. 2a:Â pulse_ampl (V): The voltage of the pulse we applied to the sample after initialization. pulse_len (ns):Â The width of the pulse we applied to the sample after initialization. Rxx (kOhm): The resistance of the sample after the application of voltage pulse. Fig. 2b:Â pulse_ampl (V): The voltage of the pulse we applied to the sample after initialization. pulse_len (ns):Â The width of the pulse we applied to the sam...电压可切换的集体电子现象在原子尺度下的持久存在，对于面积高效且低能耗的电子器件具有重要的应用价值，尤其在新兴非易失性存储器技术领域。本研究针对室温下基于双层氮化硼（bilayer boron nitride）滑动铁电性（sliding ferroelectricity）的铁电场效应晶体管（FeFET, ferroelectric field-effect transistor）的性能展开了探究。滑动铁电性是一类新型的原子级超薄二维铁电材料，其特征在于通过层间滑动实现面外极化的切换。我们采用单层石墨烯作为沟道层制备了该FeFET器件，该器件展现出纳秒级的超快速开关速度，以及超过10^11次开关循环的超高耐久性，可与当前最先进的FeFET器件相媲美。这些优异特性凸显了二维滑动铁电材料在推动下一代非易失性存储器技术发展方面的潜力……本数据集通过MATLAB代码采集得到，电阻Rxx已通过几何因子完成归一化处理。 # 基于滑动铁电性的超高速高耐久性存储器 DOI: https://doi.org/10.5061/dryad.1jwstqk3c 本论文中的绘图数据均源自数值计算结果。 ## 图1c： VB_up (V)：正向扫描的背栅电压 Rxx_up (kOhm)：背栅电压正向扫描过程中样品的电阻值 VB_down (V)：反向扫描的背栅电压 Rxx_down (kOhm)：背栅电压反向扫描过程中样品的电阻值 ## 图2a： pulse_ampl (V)：初始化后施加至样品的脉冲电压幅值 pulse_len (ns)：初始化后施加至样品的脉冲宽度 Rxx (kOhm)：施加电压脉冲后样品的电阻值 ## 图2b： pulse_ampl (V)：初始化后施加至样品的脉冲电压幅值 pulse_len (ns)：初始化后施加至样品的脉冲宽度……