Negative differential resistance devices were fabricated from two epitaxial wafers with very similar GaAs/AlAs super-lattices and evaluated in resonant-cap full-height waveguide cavities. These device
Abstract In this study, the design and characterization of CdO/InSe thin film transistors (TFT) that are grown onto Au substrates are investigated. The devices are also subjected to a vacuum annealing
Current-to-voltage characteristics along with flicker noise amplitude (A factor, description given in the paper) of the devices studied in the main and supplementary text of the article " by A. Schmit
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