Dataset for Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer

All raw data used for plotting the figures in the main text and supplementary materials are provided in this repository. Electrical measurements were performed using a probe station. The R–H loops and SOT switching measurements were carried out by applying a sensing voltage across the MTJ top electrode, which simultaneously serves as a gate voltage. The resistance was recorded via standard two-probe measurements. External magnetic fields were applied using an electromagnet, allowing both out-of-plane (for switching field extraction) and in-plane assist fields (for SOT-related measurements). The 1ns SOT pusled was generated by arbitrary wavaform generator. The following software tools are required to reproduce the data: MuMax3: GPU-accelerated micromagnetic simulation software used for modeling SAF switching behavior.MATLAB: Used for data processing, fitting, and visualization