Dataset of "Hydrogenation of Si/SiO2 Interface Using HF-Etched Wafer as a Source of Hydrogen"
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资源简介：
This dataset summarizes the measurements for the sandwiching tunnel-oxide hydrogenation study, including temperature variation (450–850 °C), oxide thickness (1–2 nm range), effective carrier lifetime (~100 µs at 650 °C with ±5% variation; up to ~0.1 ms maximum), time stability (up to 250 min), and FTIR evidence of increased hydrogen incorporation at the Si/SiO₂ interface.
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Zenodo创建时间：
2026-02-23
