CMP加工后芯片三维形貌表征参数体系

针对当前化学机械抛光(chemical mechanical polishing, CMP)后的芯片表面形貌的表征常常只停留在研究二维轮廓特征，无法完整地表达整个三维表面形貌信息，仅使用单一的评定指标来表征其表面的不平整程度等问题，建立了1个科学、全面的芯片表面形貌评定参数体系应用于工程表面粗糙度评定中，通过分析芯片表面形貌的幅值分布特征，结合芯片表面的统计特性，基于ISO 25178-2标准表征参数建立适用于芯片表面三维评定的表征参数体系. 仿真结果表明：CMP加工后芯片表面形貌的幅值近似服从高斯分布；分形维数D可以准确表征芯片表面形貌，反映其复杂程度；通过幅度参数、空间参数、混合参数和分形参数建立的芯片表面形貌评定体系能够从多方面表征芯片三维表面形貌特征，对芯片表面形貌参数评定具有一定的可行性.

To address the issues that the current characterization of chip surface topography after chemical mechanical polishing (CMP) only focuses on two-dimensional (2D) profile characteristics, fails to fully capture the complete three-dimensional (3D) surface topography information, and only uses a single evaluation index to characterize the surface unevenness, this study established a scientific and comprehensive chip surface topography evaluation parameter system for engineering surface roughness evaluation. By analyzing the amplitude distribution characteristics of the chip surface topography, combining with the statistical properties of the chip surface, and leveraging the characterization parameters specified in the ISO 25178-2 standard, a characterization parameter system suitable for 3D evaluation of chip surfaces was constructed. Simulation results demonstrate that: the amplitude distribution of the chip surface topography after CMP approximately follows a Gaussian distribution; the fractal dimension D can accurately characterize the chip surface topography and reflect its complexity; the evaluation system for chip surface topography constructed via amplitude parameters, spatial parameters, hybrid parameters and fractal parameters can characterize the 3D surface topography features of the chip from multiple aspects, and has certain feasibility for the evaluation of chip surface topography parameters.

搜集汇总

背景与挑战

背景概述

该数据集针对化学机械抛光（CMP）后芯片表面形貌表征的局限性，建立了一个基于ISO 25178-2标准的三维表面形貌评定参数体系，包含幅度、空间、混合和分形参数，以全面评估表面不平整程度。数据集通过仿真验证了分形维数D能有效表征表面复杂程度，为工程粗糙度评定提供科学依据，数据由福州大学研究人员创建，开放共享。