Data Repository.docx

The input parameters for the different layers are listed in detail in Tables 1 and 2. Optimization of different HTL parameters for D1 device such as thickness, acceptor density, defect density and interface defect density for HTL/active layer has been done. The optimization of parameters of the perovskite absorber layer such as thickness, acceptor density, defect density for D1 and D2 device structures are then carried out; followed by the series and shunt resistance, operating temperature of the cell for both the device structures D1 and D2. Lastly, the plot for optimized device and quantum efficiency have been studied. Furthermore, all the data used for carrying out this simulation work have been depicted in tabular form under suitable sections.