Raw data for "20Gbps silicon lateral MOS-Capacitor electro-optic modulator"
收藏DataCite Commons2020-09-20 更新2025-04-17 收录
下载链接：
https://eprints.soton.ac.uk/id/eprint/419936
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资源简介：
This dataset contains the raw data used for the figures in the paper Kapil Debnath, David J. Thomson, Weiwei Zhang, Ali Z Khokhar, Callum Littlejohns, James Byers, Lorenzo Mastronardi, Muhammad K. Husain, Fredric Y. Gardes, Graham T. Reed, and Shinichi Saito '20Gbps silicon lateral MOS-Capacitor electro-optic modulator' in CLEO Laser Science to Photonic Applications 2018. Conference on Lasers and Electro-optics 2018, San Jose, United States, 13-18 May.Abstract: This work presents an experimental demonstration of a 500µm long MZI carrier accumulation type modulator based on lateral MOS-capacitor integration on a silicon platform. A modulation efficiency (VπLπ) of 1.53V-cm, moderate modulation speed of 20Gbit-s-1 and extinction ratio of 3.65dB have been obtained.
提供机构：
University of Southampton
创建时间：
2018-04-24
