Research data supporting "Automated Computer Vision-Enabled Manufacturing of Nanowire Devices"

Figure2c,e: Detected spatial distribution, length and orientation of isolated InAs nanowires in a 1 × 1 mm^2 region.

Figure 4: Transfer characteristics of automatically fabricated nanowire devices with (a) 0.5 μm channel length, (b) 1.0 μm channel length, (c) 2.0 μm channel length, and (d) 2.5 μm channel length at source–drain voltage VDS = 10 mV. (e) Statistical data of nanowire device misalignment measured from the center of the nanowire to the center of the electrode pattern. Statistical data of (f) on/off ratio, (g) peak current, and (h) threshold voltage measured in automatically fabricated nanowire devices.

Figure S8: Statistical data of (a) mobility and (b) hysteresis measured in automatically
fabricated nanowire devices.

图2c,e：在1×1 mm^2区域内检测到的孤立InAs纳米线的空间分布、长度和取向。
图4：自动制备的纳米线器件的传输特性，包括（a）0.5 μm沟道长度、（b）1.0 μm沟道长度、（c）2.0 μm沟道长度以及（d）2.5 μm沟道长度，在源漏电压VDS = 10 mV下的特性。（e）从纳米线中心至电极图案中心的纳米线器件错位统计数据。（f）自动制备的纳米线器件的开关比统计数据，（g）峰值电流统计数据，（h）阈值电压统计数据。
图S8：自动制备的纳米线器件中测量的（a）电导率和（b）滞后效应的统计数据。