Low Excess Noise of Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiode from Pure Electron Injection

The files correspond to experimental results in paper: Low Excess Noise of Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiode from Pure Electron InjectionThere are two types of files:- .png which correspond to the figures- .csv, which are raw data in figures and tablesThis work presents gain and excess noise data for Al0.85Ga0.15As0.56Sb0.44 p-i-n with an i-region of 600 nm for pure electron and two mixed injection profiles. J. Taylor-Mew, V. Shulyak, B. White, C. H. Tan and J. S. Ng, "Low Excess Noise of Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiode From Pure Electron Injection," in IEEE Photonics Technology Letters, vol. 33, no. 20, pp. 1155-1158, Oct.15, 15 2021, doi: 10.1109/LPT.2021.3110123.

本数据集对应于发表于《IEEE 光子技术 Letters》期刊上的论文《基于纯电子注入的 Al0.85Ga0.15As0.56Sb0.44 雪崩光电二极管低过剩噪声》：其中包含两种类型的文件，分别为 .png 格式的图像文件和 .csv 格式的原始数据文件。该研究展示了 Al0.85Ga0.15As0.56Sb0.44 p-i-n 结构，其中 i 区长度为 600 nm 的光电二极管在纯电子注入及两种混合注入模式下的增益与过剩噪声数据。作者为 J. Taylor-Mew, V. Shulyak, B. White, C. H. Tan 和 J. S. Ng，论文发表于 2021 年 10 月 15 日的第 33 卷第 20 期，页码为 1155-1158，DOI：10.1109/LPT.2021.3110123。