Dataset for publication: Investigation of the Evolution of Bismuth Layers Deposited on Silicon by MBE

First, a procedure for obtaining the well-defined Si(111)-7×7 surface reconstruction of the silicon substrate was developed. In the next step, a 0.4 nm-thick Bi seed layer was deposited and subsequently annealed to form a compact layer promoting the epitaxial growth of thicker bismuth films. Afterwards, a 30 nm-thick Bi film was deposited and further annealed. The evolution of the bismuth film structure with increasing annealing temperature is documented by the corresponding RHEED patterns.